Hello,
I'm working through DAT study materials and was asked a question about ionization energies of Silicon. The question was which ionization energy would be exponentially greater than the previous ionization for Si. The answer was the 5th ionization energy because the electron bus be pulled away from a full p subshell, but then it went through and gave the different ionization energies in kj with the first being 800 kj, the second being 1600 kj, etc.
My question is: How were these numbers determined? Is it information that would be given to be in the question or something I should be able to figure out on my own. Can you point me in the direction to look?
Thanks for your *delete me*